Monolayer Graphene Film on Si-SIO2 – 4″ round wafer

Description Monolayer Graphene Film on Si-SIO2 – 4″ round wafer Our monolayer graphene on SiO2/Si (4” Wafer, fully covered) is a bi-dimensional material produced by CVD and transferred to a circular substrate of Si/SiO2 (300nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market – not only for its excellent quality, but also for its shape, size and number of applications. Graphene Film Transparency: > 97% Coverage: > 95% Thickness (theoretical): 0.345 nm FET Electron Mobility on Al2O3: 2000 cm2/Vs FET Electron Mobility on SiO2/Si: 4000 cm2/Vs Sheet Resistance: 580±50 Ohms/sq (1cm x 1cm) Grain size: Up to 10 μm Substrate SiO2/Si Dry Oxide Thickness: 300 nm ( /-5%) Type/Dopant: P/Bor Orientation: <100> Resistivity: <0.005 Ohm·cm Thickness: 525 /- 20 μm Front surface: Single Side Polished Back Surface: Etched Particles: <[email protected] μm