Trilayer Graphene Film on Si-SiO2 – 10mm X 10mm

Description Trilayer Graphene film on SiO₂/Si 10 mm x 10 mm Our Trilayer Graphene Film on Si-SiO2 –  10mm X 10mm is grown on a 50 micron-thick copper foil that is coated with single atomic layer of graphene which is deposited via chemical vapor deposition (CVD). For products on Si-SiO2 substrates, it is transferred to the substrate using a wet transfer process. A Monolayer Graphene Film-Si-SiO2 – 10mm X 10mm is flexible allowing for its use in flexible electronics, a growing field. Our Monolayer graphene films 4 pack has the right mix of small size and cost effectiveness to kick start your R&D projects. The trilayer graphene product consists of three CVD monolayers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples. The product can be prepared in other substrate if required (PET, Quartz). Graphene Film Transparency: > 97% Coverage: > 95% Thickness (theoretical): 0.345 nm FET Electron Mobility on Al2O3: 2000 cm2/Vs FET Electron Mobility on SiO2/Si: 4000 cm2/Vs Sheet Resistance: 580±50 Ohms/sq (1cm x 1cm) Grain size: Up to 10 μm Substrate SiO2/Si Dry Oxide Thickness: 300 nm ( /-5%) Type/Dopant: P/Bor Orientation: <100> Resistivity: <0.005 Ohm·cm Thickness: 525 /- 20 μm Front surface: Single Side Polished Back Surface: Etched Particles: <[email protected] μm